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Brand Name : ZMSH
Model Number : GaAs substrate
Certification : ROHS
Place of Origin : CN
MOQ : 3PCS
Price : BY case
Payment Terms : T/T, Western Union
Delivery Time : 4-6weeks
Packaging Details : single wafer container under cleaning room
Material : GaAs substrate wafer
size : 2inch 3inch 4inch 6inch
growth method : VGF
EPD : <500
Dopant : Si-doped Zn-doped undoped
TTV DDP : 5um
TTV SSP : 10um
Orientation : 100+/-0.1 degree
VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth
Gallium arsenide can be made into semi-insulating high-resistance materials with resistivity more than 3 orders of magnitude higher than silicon and germanium, which are used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times greater than that of silicon, it has important applications in the manufacture of microwave devices and high-speed digital circuits. Gallium arsenide made of gallium arsenide can be made into semi-insulating high-resistance materials with resistivity of more than 3 orders of magnitude higher than silicon and germanium, which are used to make integrated circuit substrates and infrared detectors.
1. Application of gallium arsenide in optoelectronics
2. Application of gallium arsenide in microelectronics
3. Application of gallium arsenide in communication
4. Application of gallium arsenide in microwave
5. Application of gallium arsenide in solar cells
Type/Dopant | Semi-Insulated | P-Type/Zn | N-Type/Si | N-Type/Si |
Application | Micro Eletronic | LED | Laser Diode | |
Growth Method | VGF | |||
Diameter | 2", 3", 4", 6" | |||
Orientation | (100)±0.5° | |||
Thickness (µm) | 350-625um±25um | |||
OF/IF | US EJ or Notch | |||
Carrier Concentration | - | (0.5-5)*1019 | (0.4-4)*1018 | (0.4-0.25)*1018 |
Resistivity (ohm-cm) | >107 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 |
Mobility (cm2/V.S.) | >4000 | 50-120 | >1000 | >1500 |
Etch Pitch Density (/cm2) | <5000 | <5000 | <5000 | <500 |
TTV [P/P] (µm) | <5 | |||
TTV [P/E] (µm) | <10 | |||
Warp (µm) | <10 | |||
Surface Finished | P/P, P/E, E/E |
Gallium arsenide is the most important and widely used semiconductor material in compound semiconductors, and it is also the most mature and the largest compound semiconductor material in production at present.
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VGF 2 Inch 4Inch N / P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth Images |